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Intel Improves Upon 45nm Chips
Techtree News Staff, Jan 31, 2007 1720 hrs ISTIntel has recently confirmed using two new materials for building the insulating walls and switching gates of its 45 nanometer (nm) transistors.
Intel has recently confirmed using two new materials for building the insulating walls and switching gates of its 45 nanometer (nm) transistors, which is seen as an advancement in fundamental transistor design.
The company claims that hundreds of millions of these microscopic transistors or switches will be used inside the next-gen Core 2 Duo, Core 2 Quad, and Xeon families of multi-core processors. In addition, the company has five early version products up and running; the first of fifteen 45nm processor products planned.
Further, Intel believes that the transistor feat will allow them continue delivering record-breaking PC, laptop, and server processor speeds, while reducing the amount of electrical leakage from transistors.
Moreover, it will allow Moore's Law, an industry rule that says transistor counts double around every two years, to thrive well into the next decade.
As such, there are now two industry superpowers - Intel and IBM that claim to be able to solve the electricity leakage problem associated with microchips.
Reportedly, both IBM and Intel are using a combination of High-K and metal gate technologies that promises reduction in leakage, allowing chips to operate at cooler temperatures, besides increasing battery life of portable devices.
In particular, IBM has developed technology along with AMD, Toshiba, and Sony, and expects to start shipping its first 45nm chips by 2008, while Intel plans to use the advancements later this year.
The company claims that hundreds of millions of these microscopic transistors or switches will be used inside the next-gen Core 2 Duo, Core 2 Quad, and Xeon families of multi-core processors. In addition, the company has five early version products up and running; the first of fifteen 45nm processor products planned.
Further, Intel believes that the transistor feat will allow them continue delivering record-breaking PC, laptop, and server processor speeds, while reducing the amount of electrical leakage from transistors.
Moreover, it will allow Moore's Law, an industry rule that says transistor counts double around every two years, to thrive well into the next decade.
As such, there are now two industry superpowers - Intel and IBM that claim to be able to solve the electricity leakage problem associated with microchips.
Reportedly, both IBM and Intel are using a combination of High-K and metal gate technologies that promises reduction in leakage, allowing chips to operate at cooler temperatures, besides increasing battery life of portable devices.
In particular, IBM has developed technology along with AMD, Toshiba, and Sony, and expects to start shipping its first 45nm chips by 2008, while Intel plans to use the advancements later this year.
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MRI
,USA, on Jan 31, 2007 09:03 PM
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