Samsung Electronics has announced that it is the first manufacturer to begin mass production of 80nm DDR2 DRAM 512Mb.
In an announcement Samsung Electronics proclaimed itself the industry's first manufacturer, to begin mass production of DDR2 DRAM - 512 Megabit (Mb) - on an 80 nanometer (nm) scale.
Samsung said that the switch from 90 nm to 80 nm process technology would enable the company to increase its production efficiency by almost 50 percent, making it capable of meeting the increased demand for DDR2.
Samsung's transition from 90 nm to 80 nm was greatly facilitated by the fact that 80 nm process technology utilizes several basic features of 90 nm geometries, and thus its fabrication required minimal upgrades.
The use of a recess channel array transistor (RCAT) allowed for speedy shift to 80 nm circuitry. The RCAT has a three-dimensional transistor layout, which considerably enhances the refresh rate - a key factor in data storage. Samsung's RCAT also reduces cell area coverage, making for increased process scaling by freeing-up space for chip-per-wafer growth.
Tom Trill, director - DRAM marketing, Samsung Semiconductors, said, "With demand for DDR2 at its highest level, since it made its market debut in 2004, our 80 nm technology provides us with the ability to more efficiently support the sustained demand growth that is expected in the DDR2 marketplace this year."
Gartner Dataquest - a semiconductor industry research organization, predicts that DDR2 memory will make up more than half of the entire DRAM market in 2006.